16 December 2013 Large strain response in PZT-PZN-PAN lead-based ceramics
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680W (2013) https://doi.org/10.1117/12.2053859
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Solid solutions of 0.8Pb(Zr0.52Ti0.48)O3-(0.2-x)Pb(Zn1/3Nb2/3)O3-xPb(Al1/2Nb1/2)O3 (PZT-PZN-PAN, PZT-PZN-xPAN) with x from 0 to 0.1 were fabricated and the dielectric, ferroelectric, piezoelectric properties were investigated in detail. Results show the crystal structure changes from coexists of tetragonal and rhombohedral to single rhombohedral phase. At a critical composition of 0.02, a maximum quasi-static piezoelectric coefficient d33 (410 pC/N) was obtained. Furthermore, it is found that the increment of PAN content could lead to increase the strain of PZT-PZN-xPAN ceramics, and a large strain response of ~0.24% with normalized strain Smax/Emax as high as 767 pm/V was obtained for the PZT-PZN-0.1PAN under a low electric field of ~3 kV/mm, which makes it a promising material for solid-state actuator applications.
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Linlin Wei, Aiyun Liu, Hailong Han, Fangting Lin, Chengchao Jin, Peng Wang, Qirong Yao, Wangzhou Shi, Chengbin Jing, "Large strain response in PZT-PZN-PAN lead-based ceramics", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680W (16 December 2013); doi: 10.1117/12.2053859; https://doi.org/10.1117/12.2053859
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