16 December 2013 Effect of surface morphology on laser-induced crystallization of amorphous silicon thin films
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680Y (2013) https://doi.org/10.1117/12.2051878
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
The effect of surface morphology on laser-induced crystallization of hydrogenated intrinsic amorphous silicon (a-Si:H) thin films deposited by PECVD is studied in this paper. The thin films are irritated by a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser. An effective melting model is built to identify the variation of melting regime influenced by laser crystallization. Based on the experimental results, the established correlation between the grain growth characterized by AFM and the crystalline fraction (Xc) obtained from Raman spectroscopy suggests that the crystallized process form amorphous phase to polycrystalline phase. Therefore, the highest crystalline fraction (Xc) is obtained by a optimized laser energy density.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lu Huang, Lu Huang, Jing Jin, Jing Jin, Guohua Wang, Guohua Wang, Weimin Shi, Weimin Shi, Weiguang Yang, Weiguang Yang, Zhijun Yuan, Zhijun Yuan, Zechun Cao, Zechun Cao, Jun Zhou, Jun Zhou, Qihong Lou, Qihong Lou, Jin Liu, Jin Liu, Guangpu Wei, Guangpu Wei, } "Effect of surface morphology on laser-induced crystallization of amorphous silicon thin films", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680Y (16 December 2013); doi: 10.1117/12.2051878; https://doi.org/10.1117/12.2051878
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