An investigation of passivation properties of SiNx-Si interface by an MIS model

Jun Wang; Meijie Han; Xueliang Ma; Hua Zhang; Ping Chen; Haixin Zhu

doi:10.1117/12.2053225

16 December 2013 An investigation of passivation properties of SiN_x-Si interface by an MIS model

Jun Wang, Meijie Han, Xueliang Ma, Hua Zhang, Ping Chen, Haixin Zhu

Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680Z (2013) https://doi.org/10.1117/12.2053225
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China

Abstract

This paper presents a new way to study passivation mechanism of SiN_x-Si interface using capacitance-voltage method. Fixed charge density (N_f) near dielectric/Si interface, which is closely related to field effect passivation, and interface trap density (D_it) at dielectric/Si interface, which is closely related to chemical passivation, can be obtained directly from experimental CV characteristics. The passivation properties of SiN_x-Si can be studied and optimized by the MIS model.

Citation Download Citation

Jun Wang, Meijie Han, Xueliang Ma, Hua Zhang, Ping Chen, and Haixin Zhu "An investigation of passivation properties of SiN_x-Si interface by an MIS model", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680Z (16 December 2013); https://doi.org/10.1117/12.2053225

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available