16 December 2013 An investigation of passivation properties of SiNx-Si interface by an MIS model
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90680Z (2013) https://doi.org/10.1117/12.2053225
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
This paper presents a new way to study passivation mechanism of SiNx-Si interface using capacitance-voltage method. Fixed charge density (Nf) near dielectric/Si interface, which is closely related to field effect passivation, and interface trap density (Dit) at dielectric/Si interface, which is closely related to chemical passivation, can be obtained directly from experimental CV characteristics. The passivation properties of SiNx-Si can be studied and optimized by the MIS model.
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Jun Wang, Jun Wang, Meijie Han, Meijie Han, Xueliang Ma, Xueliang Ma, Hua Zhang, Hua Zhang, Ping Chen, Ping Chen, Haixin Zhu, Haixin Zhu, } "An investigation of passivation properties of SiNx-Si interface by an MIS model", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90680Z (16 December 2013); doi: 10.1117/12.2053225; https://doi.org/10.1117/12.2053225
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