16 December 2013 Vibrating property of single Ge based heterostructure nanowires
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 906812 (2013) https://doi.org/10.1117/12.2051461
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Raman spectrum of single heterostructure nanowire can reflect its unusual lattice vibrations as well as the junction features. In this paper, we report Raman spectra of two morphologies of single Ge based heterostructure nanowire, that is, one is CdSe/Ge biaxial heterostructure nanowires(sample I), another is Ge nanowires is surrounded by CdSe nanoparticles (sample II), which is fabricated by one step thermal evaporation of CdSe and Ge powder. A new mode was observed in Raman spectrum of Ge nanowires surrounded by CdSe nanoparticles, which caused by the interaction of LO mode of CdSe and LO (TO) mode of Ge. The LO (TO) mode of Ge nanowire in CdSe/Ge biaxial heterostructure nanowires and Ge nanowires surrounded by CdSe nanoparticles all has a red-shift in comparison with that of Ge nanowires. The vibrational mode of CdSe in CdSe/Ge biaxial heterostructure nanowires has a red-shift. The vibrational mode of CdSe in Ge nanowires surrounded by CdSe nanoparticles has a blue-shift. The red-shift mode may be caused by quantum confinement effect. The blue-shift mode may be originated from tensile stress or high density of stacking defects. The vibrating mode of the heterostructure nanowires was much sensitive to stacking fault than to quantum confinement effect when the diameter of nanowire is larger than 300nm.
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Yao Zhang, Yao Zhang, Chunrui Wang, Chunrui Wang, Jing Xu, Jing Xu, } "Vibrating property of single Ge based heterostructure nanowires", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906812 (16 December 2013); doi: 10.1117/12.2051461; https://doi.org/10.1117/12.2051461
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