16 December 2013 Strains distribution in biaxial Ge/CdSe nanowire analyzed by a new finite element method based on boundary conditions
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 906813 (2013) https://doi.org/10.1117/12.2051718
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
A new finite element method based on boundary conditions is proposed here to obtain the complete strains distribution in Ge/CdSe biaxial nanowires. The results show that the strains in nanowire is essentially uniform along the nanowire axis, whereas turn to be complex in cross-section. Additionally, Raman spectrum of Ge subnanowire was calculated on base of those strain data. Raman frequency shifts in Ge subnanowire in Ge/CdSe biaxial nanowires is a good agreement with that of Raman spectrum, which confirms the validity of this model.
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Dong Wang, Dong Wang, Chunrui Wang, Chunrui Wang, Yao Zhang, Yao Zhang, Shasha Zhang, Shasha Zhang, Xiaofeng Xu, Xiaofeng Xu, Qinyu Yang, Qinyu Yang, } "Strains distribution in biaxial Ge/CdSe nanowire analyzed by a new finite element method based on boundary conditions", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906813 (16 December 2013); doi: 10.1117/12.2051718; https://doi.org/10.1117/12.2051718
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