16 December 2013 Control method for transition metal oxides as a hole-injection layer for organic light-emitting devices
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 906818 (2013) https://doi.org/10.1117/12.2052158
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
The mechanism of transition metal oxide, molybdenum oxide (MoOx), used as interlayers in organic light-emitting devices (OLEDs) are investigated. The electronic structures and interfacial chemical reactions are investigated with ultraviolet and x-ray photoelectron spectroscopy. The influence of evaporation temperatures on the electronic structures of MoOx films and the electrical properties of organic light emitting diodes are investigated.
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Wejiang Zhang, Wejiang Zhang, Jie Zhang, Jie Zhang, } "Control method for transition metal oxides as a hole-injection layer for organic light-emitting devices", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906818 (16 December 2013); doi: 10.1117/12.2052158; https://doi.org/10.1117/12.2052158
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