16 December 2013 Synthesis and field emission properties of graphene
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681C (2013) https://doi.org/10.1117/12.2053867
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
In this paper, a series of grahene films were fabricated on Ni coated Al2O3 ceramic substrates by using microwave plasma-assisted chemical vapor deposition (MPCVD) technique. Raman spectroscopy and scanning electron microscope (SEM) were used to study the microstructure and surface morphology of the film. The field emission (FE) property of graphene films was measured in a high vacuum system. Field electron emission results showed a turn on field is 3.5 V/μm, and current density is 90μA/cm2 at an electric field of 6 V/μm. The phenomenon of field emission was unstable and the current density was too small (no one exceeds 1mA/cm2). So the preparation method and process of graphene field emission device need further optimization, meanwhile, the mechanism and property of field emission require fully research.
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Xiufang Pan, Xiufang Pan, Lijun Wang, Lijun Wang, Xiaoping Wang, Xiaoping Wang, Longwei Jing, Longwei Jing, Songkun Li, Songkun Li, } "Synthesis and field emission properties of graphene", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681C (16 December 2013); doi: 10.1117/12.2053867; https://doi.org/10.1117/12.2053867
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