16 December 2013 Co-Sb thermoelectric thin films prepared by ion beam sputtering
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681D (2013) https://doi.org/10.1117/12.2054019
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Co-Sb is a new kind of promising thermoelectric material depending on its extremely high hole mobility, high thermoelectric power and relatively low thermal conductivity because of its complicated crystal structure. In order to obtain the best Co/Sb composition ratios, thin films with various Co/Sb composition ratios were obtained by ion beam sputtering technique with a fan-shaped target at room-temperature. The target was made by different Co and Sb plate’s areas. All the samples were annealed at 350 °C and 400 °C for one hour in vacuum chamber. The maximum Seebeck coefficient of the thin films was -210 μV/K when the thin film was annealed at 400 °C whose plate areas ratios of Co/Sb was 1:3. However the thin film possessing the maximum Seebeck coefficient has a large resistivity that causes the worse thermoelectric property. When plate ratio of Co/Sb is 1:4, the thin film had the maximum power factor of 1.56 mWm-1K-2 with an moderate seebeck coefficient of -41 μV/K and an conductivity of 9.3×105 Sm-1.
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Wei-fang Fan, Ping Fan, Zhuang-hao Zheng, Yin Zhang, Guang-xing Liang, Dong-ping Zhang, Jing-ting Luo, "Co-Sb thermoelectric thin films prepared by ion beam sputtering", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681D (16 December 2013); doi: 10.1117/12.2054019; https://doi.org/10.1117/12.2054019
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