16 December 2013 Growth and characterization of Sb2Te3 thin film deposited by pulsed laser method
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681E (2013) https://doi.org/10.1117/12.2053508
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Sb2Te3 film was deposited on glass substrates which were heated at180°C by pulsed laser deposition (PLD) process using Sb2Te3 target. The crystal structure and crystallization behavior of Sb2Te3 film was determined by X-ray diffraction (XRD) and Raman spectra, respectively. The surface morphology of the film was measured by atomic force microscope (AFM). The results suggest that the crystalline of Sb2Te3 thin film was crystallized well when the substrate temperature (Tsub) was 180°C, which indicated that Sb2Te3 thin film can be fabricated by PLD at suitable temperature.
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Tantan Liu, Hongmei Deng, Pingxiong Yang, Jun Zhang, Huiyi Cao, Jun He, Junhao Chu, "Growth and characterization of Sb2Te3 thin film deposited by pulsed laser method", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681E (16 December 2013); doi: 10.1117/12.2053508; https://doi.org/10.1117/12.2053508
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