16 December 2013 The influence of precursor films on CIGS films prepared by ion beam sputtering deposition
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681H (2013) https://doi.org/10.1117/12.2054017
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
The CuInGa(CIG) precursor films were grown by ion beam sputtering continuously CuGa/CuIn and CuIn/CuGa, and then selenized CIG to fabricate CIGS absorber films on molybdenum substrates . They were annealed in the same vacuum chamber and under the same temperature (500°C). The CIGS thin films were characterized with X-ray diffraction (XRD), Energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM) in order to study the microstructures, composition, surface morphology, electrical properties, respectively. The results showed that the CIGS thin films appeared smooth and compact with a sequence of Mo/CuGa/CuIn/Se, which were mainly of chalcopyrite structure. The CIGS thin films got the strongest diffraction peak intensity and were with good crystalline quality.
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Jun Zhao, Jun Zhao, Ping Fan, Ping Fan, Guangxing Liang, Guangxing Liang, Zhuanghao Zheng, Zhuanghao Zheng, Dongping Zhang, Dongping Zhang, Chaoming Chen, Chaoming Chen, } "The influence of precursor films on CIGS films prepared by ion beam sputtering deposition", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681H (16 December 2013); doi: 10.1117/12.2054017; https://doi.org/10.1117/12.2054017
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