16 December 2013 Microstructural characterization of Bi2Te3 thin films prepared by hot wall epitaxy
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Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681J (2013) https://doi.org/10.1117/12.2054129
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
The influence of growth conditions on the microstructures of Bi2Te3 films grown on (111) and (100)-oriented GaAs substrates by hot wall epitaxy is investigated using X-ray diffraction, scan electron microscopy, energy dispersive spectrum, high resolution transmission electron microscopy and micro-Raman spectroscopy. It is found that high quality Bi2Te3 thin films with c-axis oriented are prepared when the temperatures of the Bi2Te3 source and (111) GaAs substrate are 505°C and 375°C respectively. The low substrate temperature and the crystal symmetry mismatch between the (100) GaAs substrate and Bi2Te3 epitaxial film make the crystalline grains mis-oriented, which are responsible for the degradation of the crystal quality of Bi2Te3 films. In addition, the low substrate temperature could lead to the non-stoichiometry.
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Jianhua Guo, Jianhua Guo, Huiyong Deng, Huiyong Deng, Gujin Hu, Gujin Hu, Xiaonan Li, Xiaonan Li, Guolin Yu, Guolin Yu, Ning Dai, Ning Dai, } "Microstructural characterization of Bi2Te3 thin films prepared by hot wall epitaxy", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681J (16 December 2013); doi: 10.1117/12.2054129; https://doi.org/10.1117/12.2054129
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