Translator Disclaimer
16 December 2013 Study on growth optimization and metallization of AlN thin films
Author Affiliations +
Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681M (2013) https://doi.org/10.1117/12.2052818
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Aluminum nitride (AlN) thin films were prepared by reactive magnetron sputtering on silicon substrate with AlN nano seed crystals in argon and nitrogen gas mixtures. The influences of the deposition parameters (pressure, ratio of argon to nitrogen, sputtering power) on the transmittance and structure of the AlN thin films were investigated. X-ray diffraction (XRD) analysis showed a preferred orientation of the AlN (100). The results also showed the optimal condition for AlN growth, i.e. 0.6 Pa for working pressure, 4:1 for nitrogen/argon ratio and 300W for sputtering power. Since copper could not be adhesive to AlN for heat-sink applications, titanium layer was inserted between AlN and copper as a transition layer to achieve the metallization of AlN. We found that the films with titanium layer had obviously better adhesion property, as compared with the films without titanium layer.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhen Liu, Bin Zhang, Tao Zhu, and Yigang Chen "Study on growth optimization and metallization of AlN thin films", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681M (16 December 2013); doi: 10.1117/12.2052818; https://doi.org/10.1117/12.2052818
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top