Rectifying properties and colossal magnetoresistance in La0.9Hf0.1MnO3 /Nb-0.7 wt%-doped SrTiO3 heterojunction

Lin Wang; Zhenping Wu; Yucheng Jiang; Bing Ren; Jian Huang; Ke Tang; Wenzhu Zhang; Ju Gao; Linjun Wang

doi:10.1117/12.2054009

16 December 2013 Rectifying properties and colossal magnetoresistance in La_0.9Hf_0.1MnO₃ /Nb-0.7 wt%-doped SrTiO₃ heterojunction

Lin Wang, Zhenping Wu, Yucheng Jiang, Bing Ren, Jian Huang, Ke Tang, Wenzhu Zhang, Ju Gao, Linjun Wang

Author Affiliations +

Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681O (2013) https://doi.org/10.1117/12.2054009
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China

Abstract

A heterojunction with good rectifying properties in a wide temperature range from 20 K to 300 K was fabricated simply by depositing an as-grown La_0.9Hf_0.1MnO₃ (LHMO) film on a commercial 0.7 wt% Nb-doped SrTiO₃ single crystal substrate using pulsed laser deposition technique. The current-voltage behavior of the LHMO/STON is measured under applied magnetic fields varying between 0 and 5 T. The heterojunction shows a remarkable magnetoresistance which depends on both the temperature and bias voltages. The sign of the magnetoresistance as function of temperature at either forward or reverse bias voltage is extensively studied by the filling of electrons in the e_g and t_2g band. The good rectifying behaviors, the magnetic tunable properties and the maximum magnetoresistance obtained at room temperature make this simple heterojunction promising for practical applications.

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Lin Wang, Zhenping Wu, Yucheng Jiang, Bing Ren, Jian Huang, Ke Tang, Wenzhu Zhang, Ju Gao, and Linjun Wang "Rectifying properties and colossal magnetoresistance in La_0.9Hf_0.1MnO₃ /Nb-0.7 wt%-doped SrTiO₃ heterojunction", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681O (16 December 2013); https://doi.org/10.1117/12.2054009

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