The characterization of CuInSe2 thin films by a sequential processes of sputtering and selenization

Jun Zhang; Hongmei Deng; Pingxiong Yang; Jun He; Tantan Liu; Lin Sun; Junhao Chu

doi:10.1117/12.2053499

16 December 2013 The characterization of CuInSe₂ thin films by a sequential processes of sputtering and selenization

Jun Zhang, Hongmei Deng, Pingxiong Yang, Jun He, Tantan Liu, Lin Sun, Junhao Chu

Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681R (2013) https://doi.org/10.1117/12.2053499
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China

Abstract

Ternary CuInSe₂ (CIS) thin films were deposited on glass substrates using a binary CuIn alloy target and an elemental Cu target by employing radio-frequency (RF) magnetron sputtering process and post-selenization process. The selenization procedure is carried out within a partially close-spaced graphite box. The Cu content in CIS thin films can be controlled by different sputtering time of Cu target. The result of energy dispersive X-ray spectroscopy (EDX) indicated that the CIS thin film prepared by single CuIn alloys target had significantly composition deviation. Combined with the X-ray diffraction (XRD) and Raman spectra results showed that all CIS thin films have chalcopyrite structure. Further transmission spectra demonstrated that the optical band gap of CIS thin film is about 1.0 eV.

Citation Download Citation

Jun Zhang, Hongmei Deng, Pingxiong Yang, Jun He, Tantan Liu, Lin Sun, and Junhao Chu "The characterization of CuInSe₂ thin films by a sequential processes of sputtering and selenization", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681R (16 December 2013); https://doi.org/10.1117/12.2053499

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