24 June 2014 Three-dimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part II: modulation transfer function modeling
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Abstract
Processing improvements have facilitated manufacturing reduced pixel dimensions for lattice-matched InGaAs on InP short-wave infrared detectors. Due to its technological maturity, this material system continues to garner attention for low-light level imaging applications. With pixel dimensions smaller than minority carrier diffusion lengths, optimizing array performance by reducing crosstalk from lateral carrier diffusion remains an important design issue. Analytical models, however, have provided limited insight on underlying mechanisms limiting device performance in the conventional planar double heterointerface device. Quantitative modeling provides tools to investigate performance sensitivities and their underlying mechanisms. In this work we develop a three-dimensional numerical simulation for dense P+n In0.53Ga0.47As on InP photo detector focal plane arrays using a conventional planar, back-illuminated structure. We evaluate optical generation with finite-difference time-domain analysis, and model carrier transport in a drift diffusion analysis simultaneously solving the carrier continuity and Poisson equations. Using this model we investigate modulation transfer function variations with pixel pitch and diffused junction geometries for small dimension arrays. By accounting for carrier diffusion effects, these results should provide a benchmark against which to evaluate modulation transfer function contributions from other effects, such as crosstalk attributable to photon recycling.
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Adam R. Wichman, Adam R. Wichman, Roger E. DeWames, Roger E. DeWames, Enrico Bellotti, Enrico Bellotti, "Three-dimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part II: modulation transfer function modeling", Proc. SPIE 9070, Infrared Technology and Applications XL, 907004 (24 June 2014); doi: 10.1117/12.2050688; https://doi.org/10.1117/12.2050688
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