24 June 2014 High-performance SWIR HgCdTe FPA development on silicon substrates
Author Affiliations +
Abstract
We report the development of high performance low cost SWIR infrared detectors from MBEgrown HgCdTe on 3-inch CdTe-buffered silicon substrates. The experimental findings demonstrate that despite the large lattice mismatch between HgCdTe and Si substrate, the materials and detector performances are sufficiently better than those reported for III-V mixed crystals. High minority carrier lifetime of the order 3 μs at room temperature was measured on the as grown material. Photodetectors fabricated from this material produced low dark current densities on the order of 10-6 A/cm2 and 10-3 A/cm2 at 200K and 300K. Quantum efficiency exceeding 70% at 2.0 μm, without antireflective coating, was measured on single element detectors. Further, 320 X 256, 30 μm pitch FPA’s have been fabricated with this HgCdTe on Si material and dark current operability of ~ 99.5% (mean dark current of 30 pA/Pixel) at 200K has been demonstrated.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Bommena, J. D. Bergeson, R. Kodama, J. Zhao, S. Ketharanathan, H. Schaake, H. Shih, S. Velicu, F. Aqariden, P. S. Wijewarnasuriya, N. K. Dhar, "High-performance SWIR HgCdTe FPA development on silicon substrates", Proc. SPIE 9070, Infrared Technology and Applications XL, 907009 (24 June 2014); doi: 10.1117/12.2053020; https://doi.org/10.1117/12.2053020
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

Low-noise, low-power HgCdTe/Al2O3 1024 x 1024 FPAs
Proceedings of SPIE (October 21 1996)
2K X 2K molecular beam epitaxy HgCdTe detectors for the...
Proceedings of SPIE (September 29 2004)
Short Wavelength Infrared Hybrid Focal Plane Arrays
Proceedings of SPIE (November 30 1983)
State-of-the-art HgCdTe infrared devices
Proceedings of SPIE (April 13 2000)

Back to Top