24 June 2014 High-performance SWIR HgCdTe FPA development on silicon substrates
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We report the development of high performance low cost SWIR infrared detectors from MBEgrown HgCdTe on 3-inch CdTe-buffered silicon substrates. The experimental findings demonstrate that despite the large lattice mismatch between HgCdTe and Si substrate, the materials and detector performances are sufficiently better than those reported for III-V mixed crystals. High minority carrier lifetime of the order 3 μs at room temperature was measured on the as grown material. Photodetectors fabricated from this material produced low dark current densities on the order of 10-6 A/cm2 and 10-3 A/cm2 at 200K and 300K. Quantum efficiency exceeding 70% at 2.0 μm, without antireflective coating, was measured on single element detectors. Further, 320 X 256, 30 μm pitch FPA’s have been fabricated with this HgCdTe on Si material and dark current operability of ~ 99.5% (mean dark current of 30 pA/Pixel) at 200K has been demonstrated.
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R. Bommena, J. D. Bergeson, R. Kodama, J. Zhao, S. Ketharanathan, H. Schaake, H. Shih, S. Velicu, F. Aqariden, P. S. Wijewarnasuriya, N. K. Dhar, "High-performance SWIR HgCdTe FPA development on silicon substrates", Proc. SPIE 9070, Infrared Technology and Applications XL, 907009 (24 June 2014); doi: 10.1117/12.2053020; https://doi.org/10.1117/12.2053020


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