24 June 2014 Growth and characterization of 6" InSb substrates for use in large-area infrared-imaging applications
Author Affiliations +
In this paper we report on an industry first; the growth and characterization of 6" diameter indium antimonide (InSb) substrates that are suitable for use in the fabrication of MWIR focal plane infrared detectors. Results will be presented on the production of single crystal 6" InSb ingots grown by the Czochralski (Cz) technique. We will also assess the electrical quality of new 6" InSb crystals and present uniformity information on Hall mobility, resistivity and carrier level from which we will infer comparisons on the relative dark current performance of the material grown. High quality, epitaxy-ready type surfaces have been prepared and we will demonstrate how the key surface quality characteristics of roughness (<0.5nm rms), oxide thickness (<100Å) and flatness (<7 μm TTV) have been maintained across production processes that scale 4" to 6" wafer formats. We conclude by presenting our road map for the development of large area InSb substrates and describe how developments in Czochralski crystal growth and surface finishing technology will support industry's requirements to deliver higher performance, large format IR focal place array type devices.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark J. Furlong, Mark J. Furlong, Gordon Dallas, Gordon Dallas, Greg Meshew, Greg Meshew, J. Patrick Flint, J. Patrick Flint, David Small, David Small, Becky Martinez, Becky Martinez, Andrew Mowbray, Andrew Mowbray, } "Growth and characterization of 6" InSb substrates for use in large-area infrared-imaging applications", Proc. SPIE 9070, Infrared Technology and Applications XL, 907016 (24 June 2014); doi: 10.1117/12.2053969; https://doi.org/10.1117/12.2053969

Back to Top