Photodiodes based on the GaInAs/InP material system responding in the 1.3-1.7 μm wavelength range are of interest in a wide range of applications, from optical power and channel monitors in telecommunication systems through to advanced night vision imaging using large format focal plane type detectors for defense and security applications. Here we report on our results of GaInAs PIN photo detector structures grown on 2”, 3” and 4” InP substrates by low pressure Metalorganic Chemical Vapor Deposition (MOCVD) in both standard and new larger volume format reactor configurations. High quality, lattice matched InP/GaInAs epitaxial layers were grown and we demonstrate that when moving to larger platen configurations, high degree of thickness uniformity (<3%, FTIR), lattice mismatch (<0.1%, XRD) and compositional uniformity (<2 nm, PL) can be maintained. The surface quality of epitaxial wafers will be assessed by various surface analytical techniques. We also make comparisons with the performance of 2”, 3” and 4” photodetector structures grown, this demonstrating that MOCVD production processes have been successfully scaled. We conclude by discussing the material requirements for large area infrared focal plane array photodetectors and describe how MOCVD growth technology will address industry’s requirements for increasing device sizes with improved performance.