24 June 2014 Evaluation of 1/f noise in prospective IR imaging thin films
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Abstract
Vanadium oxide (VOx) and hydrogenated silicon germanium (SixGe1-x) are the two predominant thin film material systems used as the active layer in resistive infrared imaging. Thin films of VOx used in microbolometers have a resistivity typically between 0.1 and 1 Ω-cm with a temperature coefficient of resistance, |TCR| between 1.4%/K to 2.4%/K, while SixGe1-x:H thin films have a resistivity between 200-4,000 Ω-cm with a |TCR| between 2.9%/K to 3.9%/K. Future devices may require higher TCR materials, however, higher TCR is loosely associated with higher resistivity and therefore also with high noise. This work compares 1/f noise of high resistivity VOx and Ge:H thin films having |TCR| < 3.6%/K. The high TCR thin films of VOx were found to be amorphous while, depending on the deposition conditions, the Ge:H thin films were either amorphous or mixed phase of amorphous + nanocrystalline. Evaluation of these VOx and Ge:H thin films indicates a prospects for a superior process-property relation of 1/f noise in Ge:H thin films in comparison with thin films of VOx.
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Hitesh A. Basantani, Hitesh A. Basantani, David B. Saint John, David B. Saint John, Nikolas J. Podraza, Nikolas J. Podraza, Thomas N. Jackson, Thomas N. Jackson, Mark W. Horn, Mark W. Horn, } "Evaluation of 1/f noise in prospective IR imaging thin films", Proc. SPIE 9070, Infrared Technology and Applications XL, 90701P (24 June 2014); doi: 10.1117/12.2054652; https://doi.org/10.1117/12.2054652
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