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24 June 2014 Vanadium oxide thin film with improved sheet resistance uniformity
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Abstract
This paper reports on the deposition of vanadium oxide thin films with sheet resistance uniformity better than 2.5% over a 150 mm wafer. The resistance uniformity within the array is estimated to be less than 1%, which is comparable with the value reported for amorphous silicon-based microbolometer arrays. In addition, this paper also shows that the resistivity of vanadium oxide, like amorphous silicon, can be modeled by Arrhenius' equation. This result is expected to significantly ease the computation of the correction table required for TEC-less operation of VOx-based microbolometer arrays.
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Francis Généreux, Francis Provençal, Bruno Tremblay, Marc-André Boucher, Christian Julien, and Christine Alain "Vanadium oxide thin film with improved sheet resistance uniformity", Proc. SPIE 9070, Infrared Technology and Applications XL, 90701R (24 June 2014); https://doi.org/10.1117/12.2053465
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