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24 June 2014Study of junction performance in mid-wavelength HgCdTe photodiodes by laser-beam-induced current microscope
This paper reports on the disappearance of photosensitive area extension effect and the novel
temperature dependence of junction performance for mid-wavelength HgCdTe detectors. The
performances of junction under different temperatures are characterized by laser beam induced current
(LBIC) microscope. The physical mechanism of temperature dependence on junction transformation is
elaborated and demonstrated using numerical simulations. It is found that Hg-interstitial diffusion and
temperature activated defects jointly lead to the p-n junction transformation depended on temperature,
and wider band gap compared with the long-wavelength HgCdTe photodiode may correlate with the
disappearance of photosensitive area extension effect.
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Weicheng Qiu, X. A. Cheng, Rui Wang, Fei Yin, Bo Zhang, Weida Hu, Xiaoshuang Chen, Wei Lu, "Study of junction performance in mid-wavelength HgCdTe photodiodes by laser-beam-induced current microscope," Proc. SPIE 9070, Infrared Technology and Applications XL, 907030 (24 June 2014); https://doi.org/10.1117/12.2049395