Study of junction performance in mid-wavelength HgCdTe photodiodes by laser-beam-induced current microscope

Weicheng Qiu; X. A. Cheng; Rui Wang; Fei Yin; Bo Zhang; Weida Hu; Xiaoshuang Chen; Wei Lu

doi:10.1117/12.2049395

24 June 2014 Study of junction performance in mid-wavelength HgCdTe photodiodes by laser-beam-induced current microscope

Weicheng Qiu, X. A. Cheng, Rui Wang, Fei Yin, Bo Zhang, Weida Hu, Xiaoshuang Chen, Wei Lu

Author Affiliations +

Proceedings Volume 9070, Infrared Technology and Applications XL; 907030 (2014) https://doi.org/10.1117/12.2049395
Event: SPIE Defense + Security, 2014, Baltimore, Maryland, United States

Abstract

This paper reports on the disappearance of photosensitive area extension effect and the novel temperature dependence of junction performance for mid-wavelength HgCdTe detectors. The performances of junction under different temperatures are characterized by laser beam induced current (LBIC) microscope. The physical mechanism of temperature dependence on junction transformation is elaborated and demonstrated using numerical simulations. It is found that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation depended on temperature, and wider band gap compared with the long-wavelength HgCdTe photodiode may correlate with the disappearance of photosensitive area extension effect.

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Weicheng Qiu, Weicheng Qiu, X. A. Cheng, X. A. Cheng, Rui Wang, Rui Wang, Fei Yin, Fei Yin, Bo Zhang, Bo Zhang, Weida Hu, Weida Hu, Xiaoshuang Chen, Xiaoshuang Chen, Wei Lu, Wei Lu, "Study of junction performance in mid-wavelength HgCdTe photodiodes by laser-beam-induced current microscope", Proc. SPIE 9070, Infrared Technology and Applications XL, 907030 (24 June 2014); doi: 10.1117/12.2049395; https://doi.org/10.1117/12.2049395

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