High-field and thermal transport in 2D atomic layer devices

Andrey Serov; Vincent E. Dorgan; Ashkan Behnam; Chris D. English; Zuanyi Li; Sharnali Islam; Eric Pop

doi:10.1117/12.2052093

5 June 2014 High-field and thermal transport in 2D atomic layer devices

Andrey Serov, Vincent E. Dorgan, Ashkan Behnam, Chris D. English, Zuanyi Li, Sharnali Islam, Eric Pop

Proceedings Volume 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI; 908307 (2014) https://doi.org/10.1117/12.2052093
Event: SPIE Defense + Security, 2014, Baltimore, MD, United States

Abstract

This paper reviews our recent results of high-field electrical and thermal properties of atomically thin two-dimensional materials. We show how self-heating affects velocity saturation in suspended and supported graphene. We also demonstrate that multi-valley transport must be taken into account to describe high-field transport in MoS₂. At the same time we characterized thermal properties of suspended and nanoscale graphene samples over a wide range of temperatures. We uncovered the effects of edge scattering and grain boundaries on thermal transport in graphene, and showed how the thermal conductivity varies between diffusive and ballistic heat flow limits.

Citation Download Citation

Andrey Serov, Vincent E. Dorgan, Ashkan Behnam, Chris D. English, Zuanyi Li, Sharnali Islam, and Eric Pop "High-field and thermal transport in 2D atomic layer devices", Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 908307 (5 June 2014); https://doi.org/10.1117/12.2052093

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