5 June 2014 High-field and thermal transport in 2D atomic layer devices
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Abstract
This paper reviews our recent results of high-field electrical and thermal properties of atomically thin two-dimensional materials. We show how self-heating affects velocity saturation in suspended and supported graphene. We also demonstrate that multi-valley transport must be taken into account to describe high-field transport in MoS2. At the same time we characterized thermal properties of suspended and nanoscale graphene samples over a wide range of temperatures. We uncovered the effects of edge scattering and grain boundaries on thermal transport in graphene, and showed how the thermal conductivity varies between diffusive and ballistic heat flow limits.
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Andrey Serov, Andrey Serov, Vincent E. Dorgan, Vincent E. Dorgan, Ashkan Behnam, Ashkan Behnam, Chris D. English, Chris D. English, Zuanyi Li, Zuanyi Li, Sharnali Islam, Sharnali Islam, Eric Pop, Eric Pop, } "High-field and thermal transport in 2D atomic layer devices", Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 908307 (5 June 2014); doi: 10.1117/12.2052093; https://doi.org/10.1117/12.2052093
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