Terahertz devices and device modeling

R. Soligo; M. Saraniti; S. M. Goodnick

doi:10.1117/12.2049599

4 June 2014 Terahertz devices and device modeling

R. Soligo, M. Saraniti, S. M. Goodnick

Author Affiliations +

Proceedings Volume 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI; 90830B (2014) https://doi.org/10.1117/12.2049599
Event: SPIE Defense + Security, 2014, Baltimore, MD, United States

Abstract

In the present paper we review some of the present technologies of interest for terahertz (THz) applications, and the physics and modeling of ultra-high frequency devices such as high electron mobility transistors (HEMTs) which have achieved THz frequencies. We present results of full band Cellular Monte Carlo (CMC) physics based simulation of InP and GaN based HEMTs of current interest to industry, and in particular, we address the current limitations in their frequency response in terms of the material and device structure, and the ultimate limits of scaling for such technologies.

Citation Download Citation

R. Soligo, M. Saraniti, and S. M. Goodnick "Terahertz devices and device modeling", Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 90830B (4 June 2014); https://doi.org/10.1117/12.2049599

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