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9 June 2014 Growth of 2D heterostructures of graphene/BN
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Abstract
Metal free direct growth of graphene on h-BN using a high temperature (~1550°C) chemical vapor deposition technique was done under Ar environment. Growth temperature, methane partial pressure, hydrogen/methane flow ratio, and growth time were varied and optimized. Raman spectroscopy clearly showed the signature of graphene with G- (~1580cm-1) and 2D-mode (~2700cm-1). The smallest width of G- and 2D-peak was 30 and 55cm-1, respectively, and the Raman I2D/IG ratio varied between 0.7 and 1.8. Raman D-peak (~1350cm-1) shows a strong dependence on growth temperature with the smallest ID/IG value of 0.15 at 1550°C. In the case of long growth, nitrogen and boron doping were detected by x-ray photoelectron spectroscopy with a small Raman D’-peak. A continuous graphene film with the rms roughness (1×1 μm2 area) of 0.32nm was shown by atomic force microscopy. Early stage of growth revealed circular shaped nucleation islands, the density and heights of which are ~15/μm2 and 1-2 graphene monolayer (ML), respectively. The hydrogen/methane flow ratio was found to be a critical parameter to obtain smooth 2D growth. Growth of h-BN is performed with ammonia borane, hydrogen and Ar. The growth is found to be critically dependent on the conditions of the ammonia boran precursor. Reproducible continuous films of h-BN are reported.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeonghyun Hwang, Brian R. Calderon, Hussain A. Alsalman, Joon Young Kwak, Moonkyung Kim, and Michael G. Spencer "Growth of 2D heterostructures of graphene/BN", Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 90830D (9 June 2014); https://doi.org/10.1117/12.2053442
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