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9 June 2014 Growth of 2D heterostructures of graphene/BN
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Metal free direct growth of graphene on h-BN using a high temperature (~1550°C) chemical vapor deposition technique was done under Ar environment. Growth temperature, methane partial pressure, hydrogen/methane flow ratio, and growth time were varied and optimized. Raman spectroscopy clearly showed the signature of graphene with G- (~1580cm-1) and 2D-mode (~2700cm-1). The smallest width of G- and 2D-peak was 30 and 55cm-1, respectively, and the Raman I2D/IG ratio varied between 0.7 and 1.8. Raman D-peak (~1350cm-1) shows a strong dependence on growth temperature with the smallest ID/IG value of 0.15 at 1550°C. In the case of long growth, nitrogen and boron doping were detected by x-ray photoelectron spectroscopy with a small Raman D’-peak. A continuous graphene film with the rms roughness (1×1 μm2 area) of 0.32nm was shown by atomic force microscopy. Early stage of growth revealed circular shaped nucleation islands, the density and heights of which are ~15/μm2 and 1-2 graphene monolayer (ML), respectively. The hydrogen/methane flow ratio was found to be a critical parameter to obtain smooth 2D growth. Growth of h-BN is performed with ammonia borane, hydrogen and Ar. The growth is found to be critically dependent on the conditions of the ammonia boran precursor. Reproducible continuous films of h-BN are reported.
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Jeonghyun Hwang, Brian R. Calderon, Hussain A. Alsalman, Joon Young Kwak, Moonkyung Kim, and Michael G. Spencer "Growth of 2D heterostructures of graphene/BN", Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 90830D (9 June 2014);


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