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25 June 2014 Novel graphene FETs with field-controlling electrodes to improve RF performance
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We propose and extensively analyze a novel Graphene-FET (GFET) with two capacitively coupled field-controlling electrodes (FCE) at the ungated access regions between gate and source/drain. The FCEs are proposed to be positioned both on top and bottom of the device. The FCEs could be independently biased to modulate sheet carrier concentration and thereby the resistance in the ungated regions. The reduction of source/drain access resistance results in increased cut off frequency compared to those of conventional GFETs with the same geometry. The DC and improved RF characteristics of the proposed device have been studied using both analytical and numerical techniques and compared with the baseline designs.
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Chowdhury Al-Amin, Raju Sinha, Nezih Pala, and Wonbong Choi "Novel graphene FETs with field-controlling electrodes to improve RF performance", Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 90832W (25 June 2014);

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