Design of HgCdTe heterojunction photodiodes on Si substrate

P. Zhang; Z. H. Ye; Y. Y. Chen; C. Lin; X. N. Hu; R. J. Ding; L. He

doi:10.1117/12.2050089

28 May 2014 Design of HgCdTe heterojunction photodiodes on Si substrate

P. Zhang, Z. H. Ye, Y. Y. Chen, C. Lin, X. N. Hu, R. J. Ding, L. He

Proceedings Volume 9100, Image Sensing Technologies: Materials, Devices, Systems, and Applications; 91000R (2014) https://doi.org/10.1117/12.2050089
Event: SPIE Sensing Technology + Applications, 2014, Baltimore, MD, United States

Abstract

An innovative heterojunction photodiode structure in HgCdTe-on-Si long-wavelength (LW) infrared focal plane array (IRFPA) detector is investigated in this paper. The quantum efficiency and the photoresponse of devices have been numerically simulated, using Crosslight Technology Computer Aided Design (TCAD) software. Simulation results indicate that in contrast to the p⁺-on-n homojunction photodiode, the heterojunction photodiode effectively suppresses the crosstalk between adjacent pixels and interface recombination between HgCdTe active region and buffer layer on Si substrate. And in the range of the LW-band, the quantum efficiency of the heterojunction photodiode increases by 35.5%. Furthermore, the heterojunction photodiode acquires the narrow-band response spectrum desired in the application of the LW IRFPA detectors as the p⁺-on-n homojunction photodiode with the optical filter. Finally, the smaller bulk resistance of its heavily doped N-type layer ensures the uniformity of the pixel series resistance in the large format IRFPAs.

Citation Download Citation

P. Zhang, Z. H. Ye, Y. Y. Chen, C. Lin, X. N. Hu, R. J. Ding, and L. He "Design of HgCdTe heterojunction photodiodes on Si substrate", Proc. SPIE 9100, Image Sensing Technologies: Materials, Devices, Systems, and Applications, 91000R (28 May 2014); https://doi.org/10.1117/12.2050089

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