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21 May 2014 Wide dynamic range and high-sensitivity CMOS active pixel sensor using output voltage feedback structure
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Abstract
This paper presents a novel high-sensitivity and wide dynamic range complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) with an overlapping control gate. The proposed APS has a high-sensitivity gate/bodytied (GBT) photodetector with an overlapping control gate that makes it possible to control the sensitivity of the proposed APS. The floating gate of the GBT photodetector is connected to the n-well and the overlapping control gate is placed on top of the floating gate for varying the sensitivity of the proposed APS. Dynamic range of the proposed APS is significantly increased due to the output voltage feedback structure. Maximum sensitivity of the proposed APS is 50 V/lux•s in the low illumination range and dynamic range is greater than 110 dB. The proposed sensor has been fabricated by using 2-poly 4-metal 0.35 μm standard CMOS process and its characteristics have been evaluated.
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Sung-Hyun Jo, Myunghan Bae, Byoung-Soo Choi, Jeongyeob Kim, and Jang-Kyoo Shin "Wide dynamic range and high-sensitivity CMOS active pixel sensor using output voltage feedback structure", Proc. SPIE 9100, Image Sensing Technologies: Materials, Devices, Systems, and Applications, 910011 (21 May 2014); https://doi.org/10.1117/12.2065331
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