21 May 2014 T-ray detection in 0.35-μm CMOS technology
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Abstract
Interest in array based imaging of terahertz energy (T-Rays) has gained traction lately, specifically using a CMOS process due to its ease of manufacturability and the use of MOSFETs as a detection mechanism. Incident terahertz radiation on to the gate channel region of a MOSFET can be related to plasmonic response waves which change the electron density and potential across the channel. The 0.35 μm silicon CMOS MOSFETs tested in this work contain varying structures, providing a range of detectors to analyze. Included are individual test transistors for which various operating parameters and modes are studied and results presented. A focus on single transistor-antenna testing provides a path for discovering the most efficient combination for coupling 0.2 THz band energy. An evaluation of fabricated terahertz band test detection MOSFETs is conducted. Sensitivity analysis and responsivity are described, in parallel with theoretical expectations of the plasmonic response in room temperature conditions. A maximum responsivity of 40 000 V/W and corresponding NEP of 10 pW/Hz1/2 (±10% uncertainty) is achieved.
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Gregory J. Fertig, Gregory J. Fertig, Zoran Ninkov, Zoran Ninkov, Mark F. Bocko, Mark F. Bocko, Jagannath Dayalu, Jagannath Dayalu, Kenny D. Fourspring, Kenny D. Fourspring, Zeljko Ignjatovic, Zeljko Ignjatovic, Paul P. K. Lee, Paul P. K. Lee, Craig W. McMurtry, Craig W. McMurtry, J. Daniel Newman, J. Daniel Newman, Judith L. Pipher, Judith L. Pipher, Andrew P. Sacco, Andrew P. Sacco, Chao Zhang, Chao Zhang, } "T-ray detection in 0.35-μm CMOS technology", Proc. SPIE 9102, Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense, 91020P (21 May 2014); doi: 10.1117/12.2050754; https://doi.org/10.1117/12.2050754
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