22 June 1988 Characteristics And Reliability Of High Power Laser Diodes For Solid-State Lasers Pumping
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Proceedings Volume 0912, Pulse Single-Frequency Lasers: Technology and Applications; (1988) https://doi.org/10.1117/12.945497
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
Performance characteristics and reliability of the GaAs/AlGaAs one-watt laser diode are reported. The broad area gain-guided lasers have threshold current in the 400 mA range. The farfield radiation angles parallel and perpendicular to the junction are 13 deg and 25 deg, respectively. With a special-designed package which has a built-in thermo electric cooler the emission wavelength can be tuned accurately. These performances are stable during a long term operation except for 1 to 2 nm wavelength shift due to the increase of operation cur-rent in an Automatic Power Control(APC) mode. The extrapolated mean time to failure of 100-500 mW laser diodes are 20,000 hours at room temperature. A similar lifetime can be expected for the one-watt laser at operating temperatures lower than room temperature.
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Takayoshi Mamine, Takayoshi Mamine, Kazuo Honda, Kazuo Honda, Nozomu Yamaguchi, Nozomu Yamaguchi, Masaaki Ayabe, Masaaki Ayabe, Osamu Yoneyama, Osamu Yoneyama, } "Characteristics And Reliability Of High Power Laser Diodes For Solid-State Lasers Pumping", Proc. SPIE 0912, Pulse Single-Frequency Lasers: Technology and Applications, (22 June 1988); doi: 10.1117/12.945497; https://doi.org/10.1117/12.945497
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