2 May 2014 Investigation of the slot mode enhancement of erbium-doped polymer silicon on insulator waveguide amplifiers
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Abstract
Erbium-doped Polymer hybrid slot waveguide amplifier at λs=1530 nm with a 1480 nm pumping wavelength is investigated. Both, the waveguide structure parameters and the Er3+-doped polymer intrinsic spectroscopic parameters are swept to analyze the gain contribution sensitivities. Assuming moderate optical transmission losses of 10dB/cm, the predicted net gain typically varies from 0 to 10dB. Due to the excited state absorption (ESA) mechanism in the high intensity slot region, the signal gain is significantly suppressed for large pumping power, leading to the counterintuitive result that there is an optimum pump power value in the sub-100 mW range. The effect of the ion concentration and the ion-ion interaction is considered giving different adjusted parameters in every particular case.
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Samuel Serna , Samuel Serna , Weiwei Zhang, Weiwei Zhang, Yonggan Zhang, Yonggan Zhang, Meiling Zhang, Meiling Zhang, Dingshan Gao, Dingshan Gao, Daming Zhang, Daming Zhang, Eric Cassan, Eric Cassan, } "Investigation of the slot mode enhancement of erbium-doped polymer silicon on insulator waveguide amplifiers", Proc. SPIE 9126, Nanophotonics V, 91262A (2 May 2014); doi: 10.1117/12.2051740; https://doi.org/10.1117/12.2051740
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