2 May 2014 Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures
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Abstract
Materials with one-dimensional quantum structures are promising for their application in solar cells. The photo-voltage generation of these structures is caused by spatial separation of electron-hole pairs by a built-in electric field in the GaAs p-i-n junction. The InGaAs/GaAs sample shows a significantly higher photo-voltage in the spectral range of 1.25-1.37 eV, as compared to a reference GaAs p-n junction, due to interband transitions in the quantum wires (QWRs).
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Marianna S. Kovalova, Marianna S. Kovalova, Serhiy V. Kondratenko, Serhiy V. Kondratenko, Colin S. Furrow, Colin S. Furrow, Vasyl P. Kunets, Vasyl P. Kunets, Morgan E. Ware, Morgan E. Ware, Gregory J. Salamo, Gregory J. Salamo, } "Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures", Proc. SPIE 9126, Nanophotonics V, 91262H (2 May 2014); doi: 10.1117/12.2051881; https://doi.org/10.1117/12.2051881
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