1 May 2014 Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching
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Proceedings Volume 9132, Optical Micro- and Nanometrology V; 913217 (2014); doi: 10.1117/12.2051489
Event: SPIE Photonics Europe, 2014, Brussels, Belgium
Abstract
In this work, we present a detailed experimental Raman investigation of nanostructured silicon films prepared by metalassisted chemical etching with different nanocrystal sizes and structures. Interpretation of observed one and two-phonon Raman peaks are presented. First-order Raman peak has a small redshift and broadening. This phenomenon is analyzed in the framework of the phonon confinement model. Second-order Raman peaks were found to be shifted and broadened in comparison to those in the bulk silicon. The peak shift and broadening of two-phonon Raman scattering relates to phonon confinement and disorder. A broad Raman peak between 900-1100 cm-1 corresponds to superposition of three transverse optical phonons ~2TO (X), 2TO (W) and 2TO (L). Influence of excitation wavelength on intensity redistribution of two-phonon Raman scattering components (2TO) is demonstrated and preliminary theoretical explanation of this observation is presented.
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Igor Iatsunskyi, Stefan Jurga, Valentyn Smyntyna, Mykolai Pavlenko, Valeriy Myndrul, Anastasia Zaleska, "Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching", Proc. SPIE 9132, Optical Micro- and Nanometrology V, 913217 (1 May 2014); doi: 10.1117/12.2051489; http://dx.doi.org/10.1117/12.2051489
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KEYWORDS
Silicon

Raman spectroscopy

Phonons

Raman scattering

Nanostructuring

Wet etching

Nanostructures

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