1 May 2014 Nonlinear response of SiGe waveguides in the mid-infrared
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Abstract
The linear and nonlinear optical response of SiGe waveguides in the mid-infrared are experimentally measured. By cutback measurements we find the linear losses to be less than 1.5dB/cm between 3μm and 5μm, with a record low loss of 0.5dB/cm at a wavelength of 4.75μm. By launching picosecond pulses between 3.25μm and 4.75μm into the waveguides and measuring both their self-phase modulation and nonlinear transmission we find that nonlinear losses can be significant in this wavelength range due to free-carrier absorption induced by multi-photon absorption. This should be considered when engineering SiGe photonic devices for nonlinear applications in the mid-IR.
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L. Carletti, L. Carletti, P. Ma, P. Ma, B. Luther-Davies, B. Luther-Davies, D. Hudson, D. Hudson, C. Monat, C. Monat, S. Madden, S. Madden, D. J. Moss, D. J. Moss, M. Brun, M. Brun, S. Ortiz, S. Ortiz, S. Nicoletti, S. Nicoletti, C. Grillet, C. Grillet, } "Nonlinear response of SiGe waveguides in the mid-infrared", Proc. SPIE 9133, Silicon Photonics and Photonic Integrated Circuits IV, 91330M (1 May 2014); doi: 10.1117/12.2051689; https://doi.org/10.1117/12.2051689
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