1 May 2014 Ge quantum-well waveguide modulator at 1.3μm
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We report on the developments of Ge/SiGe quantum well (QW) waveguide modulators operating at 1.3 μm. First we studied QW structures grown on a 13-μm SiGe buffer on bulk silicon. Light was directly coupled and propagated in the active region. Using a 3-μm wide and 50-μm long modulator, an extinction ratio larger than 4 dB was obtained for a drive voltage lower than 5 V in a 15 nm wavelength range. Then simulations were performed to evaluate the performances of an integrated modulator on silicon on insulator (SOI) platform. An eigenmode expension method was used to model the vertical optical coupling between SOI waveguide and Ge/SiGe devices. It is shown that a reduction of the thickness of the buffer leads to a significant improvement in the performances (extinction ratio, insertion loss) and footprint of the waveguide-integrated devices.
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Mohamed-Said Rouifed, Delphine Marris-Morini, P. Chaisakul, Jacopo Frigerio, Giovanni Isella, Daniel Chrastina, Samson Edmond, Xavier Le Roux, Jean-René Coudevylle, David Bouville, Laurent Vivien, "Ge quantum-well waveguide modulator at 1.3μm", Proc. SPIE 9133, Silicon Photonics and Photonic Integrated Circuits IV, 91330Q (1 May 2014); doi: 10.1117/12.2052091; https://doi.org/10.1117/12.2052091

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