1 May 2014 Characterization of PECVD silicon nitride photonic components at 532 and 900 nm wavelength
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Abstract
Low temperature PECVD silicon nitride photonic waveguides have been fabricated by both electron beam lithography and 200 mm DUV lithography. Propagation losses and bend losses were both measured at 532 and 900 nm wavelength, revealing sub 1dB/cm propagation losses for cladded waveguides at both wavelengths for single mode operation. Without cladding, propagation losses were measured to be in the 1-3 dB range for 532 nm and remain below 1 dB/cm for 900 nm for single mode waveguides. Bend losses were measured for 532 nm and were well below 0.1 dB per 90 degree bend for radii larger than 10 μm.
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P. Neutens, A. Subramanian, M. Ul Hasan, C. Chen, R. Jansen, T. Claes, X. Rottenberg, B. Du Bois, K. Leyssens, P. Helin, S. Severi, A. Dhakal, F. Peyskens, L. Lagae, P. Deshpande, R. Baets, P. Van Dorpe, "Characterization of PECVD silicon nitride photonic components at 532 and 900 nm wavelength", Proc. SPIE 9133, Silicon Photonics and Photonic Integrated Circuits IV, 91331F (1 May 2014); doi: 10.1117/12.2052119; https://doi.org/10.1117/12.2052119
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