2 May 2014 Rate equation analysis of longitudinal spatial hole burning in high-power semiconductor lasers
Author Affiliations +
Abstract
For high-power semiconductor lasers, asymmetric reflectivities of facets are employed in order to improve slope efficiency. Cavity lengths of these laser diodes have been increased to better distribute heat in order to improve output power. However, these two methods result in an inhomogeneous longitudinal profile of photon density, which leads to a nonuniform gain profile and is typically referred to as longitudinal spatial hole burning (LSHB). In this work, we developed a model to self-consistently calculate the longitudinal photon density distribution, carrier density distribution, and gain distribution in a high-power semiconductor laser. The calculation is based on modified rate equations, and a finite difference method is used to solve the differential equations. Newton’s method is employed to obtain final results with residual error below 10-6. The impact of LSHB was analyzed with different parameters, and we demonstrate that LSHB is expected to limit the maximum achievable output power of semiconductor lasers having cavity lengths in excess of several mm. The results are expected to be useful in the optimization of high-power semiconductor laser designs.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ting Hao, Ting Hao, Junyeob Song, Junyeob Song, Paul O. Leisher, Paul O. Leisher, } "Rate equation analysis of longitudinal spatial hole burning in high-power semiconductor lasers", Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91340S (2 May 2014); doi: 10.1117/12.2048908; https://doi.org/10.1117/12.2048908
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Reliability of multi-stripe laser arrays
Proceedings of SPIE (January 07 2009)
Reliable high power long pulse 8XX nm diode laser bars...
Proceedings of SPIE (February 21 2011)
1550 nm DFB semiconductor lasers with high power and low...
Proceedings of SPIE (February 21 2011)
SCH-SQW semiconductor lasers
Proceedings of SPIE (January 20 2005)

Back to Top