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2 May 2014 Comparison of spatial anti-guided mechanism in single emitter VCSELs and VCSEL arrays
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We present the optimization of the carrier injection, heat flow and optical confinement aimed at single mode operation in anti-guiding long-wavelength VCSELs and VCSEL arrays. The analyzed structure incorporates InP/AlGaInAs quantum wells within an InP cavity. The cavity is bounded by GaAs/AlGaAs DBRs. The tunnel junction is responsible for carrier funneling into the active region. The air-gap etched at the interface between cavity and top DBR provides the confinement of the lateral modes. To rigorously simulate the physical phenomena taking place in the device we use a multi-physical model, which comprises three-dimensional models of optical (Plane Wave Admittance Method), thermal and electrical (Finite Element Method) phenomena. In the analysis we investigate the influence of the size of single and multiple emitters and the distance between the emitters in the case of the VCSEL arrays. As a result, we illustrate the complex competition of the modes and determine the geometrical parameters favoring specific array modes in the considered designs and compare the designs with respect to mode discrimination.
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Tomasz Czyszanowski, Maciej Dems, Robert P. Sarzala, Krassimir Panajotov, and Elyahou Kapon "Comparison of spatial anti-guided mechanism in single emitter VCSELs and VCSEL arrays", Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91340X (2 May 2014);

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