2 May 2014 Soliton bound states in semiconductor disk laser
Author Affiliations +
Abstract
We report what we believe is the first demonstration of a temporal soliton bound state in semiconductor disk laser. The laser was passively mode-locked using a quantum dot based semiconductor saturable absorber mirror (QD-SESAM). Two mode-locking regimes were observed where the laser would emit single or closely spaced double pulses (soliton bound state regime) per cavity round-trip. The pulses in soliton bound state regime were spaced by discrete, fixed time duration. We use a system of delay differential equations to model the dynamics of our device.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Evgeny A. Viktorov, Evgeny A. Viktorov, Mantas Butkus, Mantas Butkus, Thomas Erneux, Thomas Erneux, Craig J. Hamilton, Craig J. Hamilton, Graeme P. A. Malcolm, Graeme P. A. Malcolm, Edik U. Rafailov, Edik U. Rafailov, "Soliton bound states in semiconductor disk laser", Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 913417 (2 May 2014); doi: 10.1117/12.2052534; https://doi.org/10.1117/12.2052534
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Diode pumped Yb KGW mode locked laser delivering 100 fs...
Proceedings of SPIE (August 31 2004)
Ultrashort pulses with high average power
Proceedings of SPIE (October 05 2003)
980-nm picosecond ytterbium fiber laser
Proceedings of SPIE (August 31 2004)
High-power quantum dot semiconductor disk lasers
Proceedings of SPIE (February 14 2012)

Back to Top