2 May 2014 Distributed-feedback GaSb-based laser diodes in the 2.3 to 3.3μm wavelength range
Author Affiliations +
Abstract
Development of a reliable, selective, sensitive, technique for atmospheric trace gas concentrations monitoring is a critical challenge in science and engineering. Tunable single-frequency laser in the 2.3 to 3.3µm wavelength range, working in a continuous regime at room temperature can be used for absorption spectroscopy to identify and quantify several gases such as methane (greenhouse gases) and ethylene (food-processing) which are studied in the IES. We report here on the design and fabrication of 1st to 4th order distributed-feedback (DFB) antimonide-lasers diodes in the 2.3 to 3.3µm wavelength range. This process is applied to all studied structures grown by molecular beam epitaxy (MBE) on GaSb substrate. Electromagnetic modeling helps us to determine the Bragg grating period as well as the global geometry of the structure in order to optimize both modal discrimination and optical power of the lasing mode. The grating is defined by holographic lithography. Two DFB laser diode designs are proposed and investigated in parallel: -Side wall corrugation DFB: A corrugation on the lateral sides of the ridge waveguide is transferred by both wet and dry on a hard mask followed by a Cl2/N2 dry etching in the III-V heterostructure. -Buried DFB: The MBE growth is stopped at the top of the active region. Then the Bragg grating is etched by Ar sputtering . A MBE regrowth process is performed allowing the growth of the upper cladding layer. Next chemical etching of the mesa is done with fluoro-chromic acid. Si3N4 isolation and evaporation of ohmic contacts ends those processes. Finally we will show the results on the fabrication and characterization of the devices. This work is supported by the ANR NexCILAS international project, ANR MIDAS project, NUMEV labex and RENATECH national Network.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Quentin Gaimard, Quentin Gaimard, Tong Nguyen-Ba, Tong Nguyen-Ba, Alexandre Larrue, Alexandre Larrue, Laurent Cerutti, Laurent Cerutti, Yves Rouillard, Yves Rouillard, Olivier Gauthier-Lafaye, Olivier Gauthier-Lafaye, Roland Teissier, Roland Teissier, Aurore Vicet, Aurore Vicet, "Distributed-feedback GaSb-based laser diodes in the 2.3 to 3.3μm wavelength range", Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91341J (2 May 2014); doi: 10.1117/12.2052115; https://doi.org/10.1117/12.2052115
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Performance of 3 W 100 um stripe diode laser at...
Proceedings of SPIE (June 05 2001)
980-nm high-power semiconductor lasers
Proceedings of SPIE (October 18 2001)
GaSb based 1.9 to 2.4 µm quantum well diode...
Proceedings of SPIE (March 31 2005)

Back to Top