2 May 2014 Coupled-cavity VCSELs: numerical analysis of physical phenomena
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Abstract
A self-consistent model of a GaAs-based 850 nm coupled-cavity vertical-cavity surface-emitting diode laser is presented. The analyzed laser consists of two identical AlGaAs cavities with GaAs quantum wells, separated with 10 pairs of middle DBR. The current apertures are realized by ion-implantation for the top cavity and selective oxidation for the bottom. To accurately simulate the physical phenomena present in the CW regime of the analyzed device, we use a multi-physical model, which comprises self-consistent Finite Element Method (FEM) thermo-electrical model. The numerical parameters have been found by the calibration based on experimental results. We have analyzed and shown the influence of the driving voltages on the temperature distribution within the analyzed structure and current densities in both cavities.
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Leszek Frasunkiewicz, Leszek Frasunkiewicz, Maciej Dems, Maciej Dems, Robert P. Sarzała, Robert P. Sarzała, Kent D. Choquette, Kent D. Choquette, Krassimir Panajotov, Krassimir Panajotov, Tomasz Czyszanowski, Tomasz Czyszanowski, } "Coupled-cavity VCSELs: numerical analysis of physical phenomena", Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91342C (2 May 2014); doi: 10.1117/12.2052602; https://doi.org/10.1117/12.2052602
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