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2 May 2014 Electro-thermal characteristics of VCSELs: simulations and experiments
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Abstract
We are implementing an electro–thermal simulation tool to optimize the characteristics of GaAs-based vertical- cavity surface-emitting lasers (VCSELs). For this purpose it turned out to be necessary to revisit basic material parameters. In this paper we elaborate on the composition, carrier density, and temperature dependencies of the electron mobility of AlxGa1−xAs semiconductors. We present the principles of the pragmatic quasi-three- dimensional (q3D) device model and show selected results.
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Markus Daubenschuez, Philipp Gerlach, and Rainer Michalzik "Electro-thermal characteristics of VCSELs: simulations and experiments", Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91342H (2 May 2014); https://doi.org/10.1117/12.2052895
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