1 May 2014 Photoelectrical properties of indandione fragment containing azobenzene compounds
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Abstract
Organic materials are becoming more popular due to their potential application in electronics. Low molecular weight materials possible produce from solution are in special consideration. It gives the possibility to avoid both thermal evaporation in vacuum, and use of polymers in thin film preparation process. Indandione fragment containing azobenzene compounds are one of such materials. These compounds are good candidates for use in design of novel molecular electronic devices due to their possibility to form amorphous structure from solution thus allowing developing flexible, small size systems with low production costs. In this work three indandione fragment containing azobenzene compounds were investigated. Difference between these compounds is bulky groups which assist formation of amorphous thin film. Absorption spectra of the investigated compounds are similar to P3HT but with higher absorption coefficient. Molecule ionization and electron affinity levels of these compounds are around -5.45eV and -3.80eV, respectively. Combining PCBM with investigated compounds could lead to difference between electron affinity levels maximum of 0.15eV. It is several times less compared to ~1eV for P3HT:PCBM system. Higher difference between the donor ionization level and the acceptor affinity level could also be obtained which should lead to the higher open circuit voltage.
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Janis Latvels, Raitis Grzibovskis, Kaspars Pudzs, Aivars Vembris, Dagnija Blumberga, "Photoelectrical properties of indandione fragment containing azobenzene compounds", Proc. SPIE 9137, Organic Photonics VI, 91371G (1 May 2014); doi: 10.1117/12.2052604; https://doi.org/10.1117/12.2052604
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