Global shutter image sensors offer significant advantages over rolling shutter imagers but their implementation needs careful consideration. Each pixel needs a storage element on which the signal is stored after the exposure period. To cope with low read noise requirements, it is essential that the pixel can still perform correlated double sampling or CDS. This requires a second memory element in the pixel, so that the reset reference level of the sense amplifier can be read before the charge is dumped onto the sense node. An important specification is the parasitic light sensitivity or shutter efficiency of the pixel. This is a measure how insensitive the memory cell in the pixel is to light. Depending on the pixel architecture, this may be especially difficult in combination with backside illumination. Other important pixel performance parameters related to pixel architecture are read noise and dark current. In this paper we will review global shutter pixel architectures, compare their performances and discuss future developments. We discuss the issues related to global shutter pixels for high dynamic range and backside illumination, and how the most advanced CMOS image sensor process technologies can offer new approaches.