15 May 2014 Characterization of single-photon avalanche photodiodes in CMOS 150nm technology
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Abstract
The characterization of two Single-Photon Avalanche Diodes (SPADs) structures fabricated in CMOS 150nm technology is reported in this paper. The structures are based on a pwell/n-iso junction and differ only for the presence of a polysilicon layer above the guard ring. Each structure is implemented in two different shapes (circular and square) and four sizes (5,10,15 and 20μm). Measurement results show that both average breakdown voltage and non-uniformity decrease with SPAD sizes. The statistical variation of Photon Detection Efficiency (PDE) and its dependence on device size are also reported and discussed. For all the considered device sizes, a PDE non-uniformity lower than 0.5% was measured.
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Hesong Xu, Hesong Xu, Lucio Pancheri, Lucio Pancheri, Leo H. C. Braga, Leo H. C. Braga, David Stoppa, David Stoppa, } "Characterization of single-photon avalanche photodiodes in CMOS 150nm technology", Proc. SPIE 9141, Optical Sensing and Detection III, 91410A (15 May 2014); doi: 10.1117/12.2052266; https://doi.org/10.1117/12.2052266
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