Room temperature InGaAs hot electron detector for THz/subTHz regions

Jinchao Tong; Jingguo Huang; Zhiming Huang; Junhao Chu

doi:10.1117/12.2054015

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21 February 2014 Room temperature InGaAs hot electron detector for THz/subTHz regions

Jinchao Tong, Jingguo Huang, Zhiming Huang, Junhao Chu

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Proceedings Volume 9142, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013; 914202 (2014) https://doi.org/10.1117/12.2054015
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held July-December 2013, 2013, SuZhou, China

Abstract

A THz/subTHz radiation detector based on MOCVD-grown modulation-doped In_xGa_1-xAs/InP structure is proposed. Devices have bow-tie metallic antennas to improve the couple efficiency about 5 dB and are fabricated with mesas of 3 μm depth by wet etching. Detection by hot electron effects under external electromagnetic radiation is explained. Measurements performed at electromagnetic wave frequency f=0.0375 THz show the detector having sensitivity about 6 V/W and noise equivalent power (NEP) about 1.6×10^-9 W/Hz^1/2 at room temperatures.

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Jinchao Tong, Jingguo Huang, Zhiming Huang, and Junhao Chu "Room temperature InGaAs hot electron detector for THz/subTHz regions", Proc. SPIE 9142, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, 914202 (21 February 2014); https://doi.org/10.1117/12.2054015

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