21 February 2014 Room temperature InGaAs hot electron detector for THz/subTHz regions
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Abstract
A THz/subTHz radiation detector based on MOCVD-grown modulation-doped InxGa1-xAs/InP structure is proposed. Devices have bow-tie metallic antennas to improve the couple efficiency about 5 dB and are fabricated with mesas of 3 μm depth by wet etching. Detection by hot electron effects under external electromagnetic radiation is explained. Measurements performed at electromagnetic wave frequency f=0.0375 THz show the detector having sensitivity about 6 V/W and noise equivalent power (NEP) about 1.6×10-9 W/Hz1/2 at room temperatures.
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Jinchao Tong, Jinchao Tong, Jingguo Huang, Jingguo Huang, Zhiming Huang, Zhiming Huang, Junhao Chu, Junhao Chu, "Room temperature InGaAs hot electron detector for THz/subTHz regions", Proc. SPIE 9142, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, 914202 (21 February 2014); doi: 10.1117/12.2054015; https://doi.org/10.1117/12.2054015
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