21 February 2014 Defects in undoped semi-insulating InP
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Abstract
This paper, the electron irradiation-induced defects in undoped InP has undergone a high-temperature annealing in iron phosphide ambience. The positron annihilation lifetime spectroscopy (PAL) and thermally stimulated current spectroscopy (TSC) have been employed to study it . The results proved that, the defects in SI-InP after electron irradiation increases and the complex defects are formed . The positron mean lifetime increases about 18 ps , and more defect peaks are also found in the TSC after irradiation.
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Yan Chen, Yan Chen, Xin Guo, Xin Guo, } "Defects in undoped semi-insulating InP ", Proc. SPIE 9142, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics: Optical Imaging, Remote Sensing, and Laser-Matter Interaction 2013, 914217 (21 February 2014); doi: 10.1117/12.2057684; https://doi.org/10.1117/12.2057684
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