22 June 2014 Development and performance of Kyoto's x-ray astronomical SOI pixel (SOIPIX) sensor
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Abstract
We have been developing monolithic active pixel sensors, known as Kyoto’s X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5–10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3–40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300 eV (FWHM) at 6 keV and a read-out noise of 33 e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-Kα and Kβ. Moreover, we produced a fully depleted layer with a thickness of 500 μm. The event-driven readout mode has already been successfully demonstrated.
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Takeshi G. Tsuru, Hideaki Matsumura, Ayaki Takeda, Takaaki Tanaka, Shinya Nakashima, Yasuo Arai, Koji Mori, Ryota Takenaka, Yusuke Nishioka, Takayoshi Kohmura, Takaki Hatsui, Takashi Kameshima, Kyosuke Ozaki, Yoshiki Kohmura, Tatsuya Wagai, Dai Takei, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Hiroki Kamehama, "Development and performance of Kyoto's x-ray astronomical SOI pixel (SOIPIX) sensor", Proc. SPIE 9144, Space Telescopes and Instrumentation 2014: Ultraviolet to Gamma Ray, 914412 (22 June 2014); doi: 10.1117/12.2057158; https://doi.org/10.1117/12.2057158
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