9 September 2014 A striking mobility improvement of C60 OFET by inserting diindenoperylene layer between C60 and SiO2 gate insulator
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Abstract
Gap states in organic semiconductors play a crucial role in determining Energy-Level Alignment and in many cases they act as charge trapping centers to result in serious lowering of charge mobility. Thus origin of gap states has gained increasing attention in order to realize higher mobility organic devises [1-4]. Bussolotti et al. have demonstrated recently that gap states in a pentacene thin film increase even by exposing the film to inert gas and confirmed that the gas exposure mediates structural defects in the film thus gap states [4]. The results have also indicated that preparation of highly-ordered organic thin film is necessary to improve the device performance, namely to decrease trapping states. To improve the ordering of molecule in the film, deposition of a template molecular underlayer is one of the simplest methods to increase the domain size of overlayer film and its crystallinity, and thus we expect improvement of the charge mobility [5]. Hinderhofer et al. reported recently that diindenoperylene (DIP; Figure 1a) could be used as a template layer to grow highly ordered and oriented C60 film with its (111) plane parallel to the SiO2 substrate [6]. Considering the hole mobility of DIP single crystal, which is quite low (~0.005 cm2 V-1S-1 at room temperature [7]), it is expected for the DIP template C60 thin film system that lower drain current would be achieved to improve the on/off ratios based on n type C60 transistor and its electron mobility (especially on the negative Vgs region, compared to PEN modified C60 transistors [8]).
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Jin-peng Yang, Keiichiro Yonezawa, Alexander Hinderhofer, Fabio Bussolotti, Satoshi Kera, Nobuo Ueno, "A striking mobility improvement of C60 OFET by inserting diindenoperylene layer between C60 and SiO2 gate insulator", Proc. SPIE 9165, Physical Chemistry of Interfaces and Nanomaterials XIII, 91651N (9 September 2014); doi: 10.1117/12.2063522; https://doi.org/10.1117/12.2063522
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